onsemi FCB20N60FTM
$ 2.625
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -7.51%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Fichas técnicas y documentos
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Price @ 1000
$ 2.625
$ 2.61
$ 2.61
Stock
216,761
240,031
240,031
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
-
5 V
5 V
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
208 W
208 W
208 W
Input Capacitance
3.08 nF
3.08 nF
3.08 nF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FCB20N60FTM suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -7.51%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation208 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time140 ns
Schedule B8541290080
Turn-Off Delay Time230 ns
Turn-On Delay Time62 ns
Voltage Rating (DC)600 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FCB20N60FTM.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento