Infineon IRL1004SPBF
$ 2.95
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Modelos CAD
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Componentes alternativos
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Componentes alternativos
Price @ 1000
$ 2.95
$ 5.7
$ 5.7
Stock
103,244
72,263
72,263
Authorized Distributors
2
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
130 A
130 A
130 A
Threshold Voltage
1 V
-
-
Rds On Max
6.5 mΩ
6.5 mΩ
6.5 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
5.33 nF
5.33 nF
5.33 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-11-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Descripciones
Descripciones de Infineon IRL1004SPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;D2Pak;PD 200W;VGS +/-16V
Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 40V 130A D2PAK
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, N, 40V, 110A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.1W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Power Dissipation on 1 Sq. PCB:200W; Pulse Current Idm:450A; SMD Marking:L1004S; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)130 A
Current Rating130 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max6.5 mΩ
Recovery Time120 ns
Resistance6.5 MΩ
Rise Time210 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)40 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento