Infineon IRFZ48NPBF
$ 0.633
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +11.12%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRFZ48NPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.633
$ 1.377
Stock
2,170,673
322,532
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
64 A
69 A
Threshold Voltage
4 V
-
Rds On Max
14 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
94 W
160 W
Input Capacitance
1.97 nF
1.9 nF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Componentes relacionados
InfineonIRFZ48VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
InfineonIRFZ46NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
InfineonIRFZ44ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg
Descripciones
Descripciones de Infineon IRFZ48NPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3+ Tab TO-220AB
Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +11.12%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)64 A
Current Rating64 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation94 W
Rds On Max14 mΩ
Recovery Time100 ns
Rise Time78 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height19.15 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento