Infineon IRFS4620PBF
$ 2.55
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
No hay datos disponibles
Modelos CAD
0 models available
Componentes alternativos
1 piezas disponibles
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 2.55
$ 1.003
Stock
225,044
401,447
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount, Through Hole
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
24 A
24 A
Threshold Voltage
5 V
-
Rds On Max
77.5 mΩ
77.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
144 W
144 W
Input Capacitance
1.71 nF
1.71 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Componentes relacionados
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MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Descripciones
Descripciones de Infineon IRFS4620PBF suministradas por sus distribuidores.
Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK
MOSFET N-CH 200V 24A D2PAK N-Channel 200 V 24A (Tc) 144W (Tc) Surface Mount D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, 200V, 24A, 78 mOhm, 25 nC Qg, D2PAK
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):77.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:D2-PAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
No hay datos disponibles
Modelos CAD
0 models available
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance77.5 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time14.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance78 mΩ
Package Quantity1000
Power Dissipation144 W
Rds On Max77.5 mΩ
Rise Time22.4 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time25.4 ns
Turn-On Delay Time13.4 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento