Infineon IRFR1010ZTRLPBF
$ 0.736
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR1010ZTRLPBF | 4450 | 17h | |||||||||
| RS (Formerly Allied Electronics) | IRFR1010ZTRLPBF | 0 | 6K | Bulk | 10h | |||||||
| Microchip USA | IRFR1010ZTRLPBF | 355 | 600 | 1d | ||||||||
| Verical | IRFR1010ZTRLPBF | 4450 | 339 | |||||||||
| Win Source | WS-IRFR1010ZTRLPBF | 20 | 240 | 18h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.736
$ 0.749
$ 0.749
Stock
695,885
760,997
760,997
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
-
-
Rds On Max
7.5 mΩ
7.5 mΩ
7.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
2.84 nF
2.84 nF
2.84 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
Componentes relacionados
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MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
InfineonIRFR4104TRLPBF
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
VishaySIS434DN-T1-GE3
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
Descripciones
Descripciones de Infineon IRFR1010ZTRLPBF suministradas por sus distribuidores.
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
T&R / MOSFET, 55V, 91A, 7.5 mOhm, 63 nC Qg, D-Pak
Trans MOSFET N-CH Si 55V 91A 3-Pin(2+Tab) DPAK T/R
140W(Tc) 20V 4V@ 100¦ÌA 95nC@ 10 V 1N 55V 7.5m¦¸@ 42A,10V 42A 2.84nF@25V TO-252 6.5mm*6.22mm*2.3mm
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.5 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max7.5 mΩ
Rise Time76 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time17 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento