Vishay SIHU7N60E-GE3
$ 0.83
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIHU7N60E-GE3 | 450 | 1 | |||||||||
| DigiKey | 742-SIHU7N60E-GE3-ND | 2.240 | 1 | Tube | ||||||||
| TME | SIHU7N60E-GE3 | 0 | 3K | 2h | ||||||||
| Avnet | SIHU7N60E-GE3 | 0 | 3K | 3d | ||||||||
| TTI Europe | SIHU7N60E-GE3 | 0 | 3K | Tube | 6h |
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3-Monats-Trend: +0.00%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
International RectifierIPU60R600C6BKMA1
MOSFET N-CH 600V 7.3A TO-251 / Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-251 Tube
STMicroelectronicsSTU12N60M2
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
STMicroelectronicsSTU10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in IPAK package
onsemiNDD60N550U1-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
onsemiNDD60N550U1-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
Beschreibungen
Beschreibungen von Vishay SIHU7N60E-GE3, die von den Distributoren bereitgestellt werden.
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
78W(Tc) 30V 4V@ 250¦ÌA 40nC@ 10 V 1N 600V 600m¦¸@ 3.5A,10V 7A 680pF@100V TO-251AA 6.22mm
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Bestandsverlauf
3-Monats-Trend: +0.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage609 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation78 W
Rds On Max600 mΩ
Rise Time13 ns
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time13 ns
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen