Vishay IRFBC20STRLPBF

Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - D2PAK-3
$ 1.187
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IHS

Datasheet11 SeitenVor 4 Jahren

Newark

Future Electronics

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Alternative Teile

Dieser Teil
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VishayIRFBC20STRLPBF
VishayIRFBC20SPBF
Price @ 1000
$ 1.187
$ 1.255
Stock
12,352
49,785
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
2.2 A
2.2 A
Threshold Voltage
-
4 V
Rds On Max
4.4 Ω
4.4 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.1 W
3.1 W
Input Capacitance
350 pF
350 pF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30

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Beschreibungen

Beschreibungen von Vishay IRFBC20STRLPBF, die von den Distributoren bereitgestellt werden.

Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - D2PAK-3
Future Electronics
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):4.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Newark

Bilder

Vishay
Newark
Future Electronics

Aliasnamen des Herstellers

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  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
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  • Vishay Semiconductors
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  • Vishay Intertech
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • Vishay Intertechnologies
  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
  • VISHAY FOIL RESISTORS
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  • Vishay Sfernice
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