STMicroelectronics STB7NK80ZT4

N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a D2PAK package

STB7NK80ZT4 N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 2+TAB-PIN TO-263

Trans MOSFET N-CH 800V 5.2A 3-Pin(2+Tab) D2PAK T/R

STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 5.2 A, D2PAK (TO-263), , 3

Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Mosfet, N Channel, 800V, 5.2A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.6A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):1.5Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB7NK80ZT4