onsemi NTR4003NT1G
$ 0.065
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 58M9926 | 32.237 | 1 | 1d | ||||||||
| Newark | NTR4003NT1G | 32.167 | 1 | Cut Tape | ||||||||
| Arrow Electronics | NTR4003NT1G | 33.765 | 1 | |||||||||
| Verical | NTR4003NT1G | 32.000 | 3K | |||||||||
| Future Electronics | NTR4003NT1G | 498.000 | 3K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -2.67%
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Price @ 1000
$ 0.065
$ 0.065
Stock
21,605,069
7,016,805
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
500 mA
500 mA
Threshold Voltage
1.4 V
800 mV
Rds On Max
1.5 Ω
1.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
690 mW
690 mW
Input Capacitance
21 pF
21 pF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
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Beschreibungen
Beschreibungen von onsemi NTR4003NT1G, die von den Distributoren bereitgestellt werden.
NTR4003N: Small Signal MOSFET 30V 560mA 1.5 Ohm Single N-Channel SOT-23
NTR4003NT1G N-CHANNEL MOSFET TRANSISTOR, 0.56 A, 30 V, 3-PIN SOT-23
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount
MOSFET-Single, N-Channel, Small Signal, SOT-23 Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
NFET SOT23 30V .56A 1500M; Transistor Polarity: N Channel; Continuous Drain Current Id: 560µA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Diss
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:560mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:830mW; No. of Pins:3Pins RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -2.67%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time47.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation690 mW
Rds On Max1.5 Ω
Resistance1 Ω
Rise Time47.9 ns
Schedule B8541210080
Threshold Voltage1.4 V
Turn-Off Delay Time65.1 ns
Turn-On Delay Time16.7 ns
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi NTR4003NT1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen