onsemi MUN5115DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
$ 0.063
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
AvnetMUN5115DW1T1G18.00024K
1d
VericalMUN5115DW1T1G12.0009678
Rochester ElectronicsMUN5115DW1T1G16.666
22h
Newark
2
MUN5115DW1T1G09KCut Tape
Onlinecomponents.comMUN5115DW1T1G03KBulk

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi MUN5115DW1T1G herunter.

IHS

Datasheet11 SeitenVor 8 Jahren

Electro Sonic

onsemi

Newark

iiiC

Bestandsverlauf

3-Monats-Trend:
-3.38%
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Alternative Teile

Dieser Teil
Alternative Teile
onsemiMUN5115DW1T1G
onsemiMUN5116DW1T1G
onsemiMUN5116DW1T1G
Price @ 1000
$ 0.063
$ 0.048
$ 0.048
Stock
3,637,289
391,786
391,786
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-363-6
SOT-363-6
SOT-363-6
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
-
250 mV
250 mV
hFE Min
160
160
160
Power Dissipation
250 mW
-
-

Lieferkette

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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onsemiMUN5111DW1T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Details

Beschreibungen

Beschreibungen von onsemi MUN5115DW1T1G, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
IHS
Dual PNP Bipolar Digital Transistor (BRT)
onsemi
250mV@ 1mA,10mA 2 PNP - Pre-Biased (Dual) 385mW 500nA 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm
UnikeyIC
Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Verical
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
Component Stockers USA
10kO, 8 kO Dual PNP Bias Resistor Transistors (BRT) 10kO, 8 kO Dual PNP BRT - Consumer/Industrial Qualified. ONSSPCTRNSTME1D1N;
Avnet Silica
Brt Transistor, 50V, 10Kohm, Sc88, Full Reel; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5115DW1T1G
Newark
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.
North Star Micro

Bilder

Newark
TME
Rochester Electronics
LZChips

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