onsemi MMUN2111LT1G
$ 0.029
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | MMUN2111LT1GOSCT-ND | 22.877 | 1 | Cut Tape | ||||||||
| Future Electronics | MMUN2111LT1G | 510.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMUN2111LT1G | 42.000 | 3K | 1d | ||||||||
| Newark | MMUN2111LT1G | 46.240 | 5 | Cut Tape | ||||||||
| Verical | MMUN2111LT1G | 7.639 | 137 |
Bestandsverlauf
3-Monats-Trend: -36.23%
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Price @ 1000
$ 0.029
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$ 0.03
Stock
11,839,695
2,154,488
2,154,488
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
35
35
35
Power Dissipation
246 mW
246 mW
246 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Beschreibungen
Beschreibungen von onsemi MMUN2111LT1G, die von den Distributoren bereitgestellt werden.
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Transistor: PNP; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; R1: 10k¦¸
Bipolar Transistors (BJT); MMUN2111LT1G; ON SEMICONDUCTOR; PNP; 3; 50 V; 100 mA
R1 = 10 KILO OHM, R2 = 10 KILO OHM PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23
35@5mA,10V One PNP - Pre-Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R
Pre Biased Triodes PNP Ic=100mA Vceo=50V hfe=35 P=400mW SOT23
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
TRANSISTOR, PNP, DIGITAL,-50V SOT-23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -36.23%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MMUN2111LT1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen