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onsemiMMUN2115LT1G

onsemiMMUN2116LT1G

Price @ 1000

$ 0.035

$ 0.037

Stock

5,108,091

1,130,273

Authorized Distributors

Mount

Case/Package

SOT-23-3

Polarity

PNP

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

160

Power Dissipation

246 mW

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-10-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi MMUN2115LT1G, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Abacus Technologies

MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23

Future Electronics

PNP Bipolar Digital Transistor (BRT)

onsemi

Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

Verical

PNP - Pre-Biased 400mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

Dasenic

Digital Transistor PNP 100mA R=10K SOT23

RS APAC

100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

Component Stockers USA

onsemi PNPdigital transistor, SOT-23encapsulation, SMD mount, Maximum DC collector current-100 mA, maximum collector-emission voltage-50 V

UnikeyIC

TRANSISTOR, RF, PNP, 50V, SOT-23-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resis

Farnell

Brt Transistor, 50V, 10Kohm, Sot-23, Full Reel; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:50V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:246Mw; Corriente De Colector Dc:100Ma; Núm. De Contactos:3 |Onsemi MMUN2115LT1G

Newark

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.

North Star Micro

Bilder

RS (Formerly Allied Electronics)

Future Electronics

TME

LZChips

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Bestandsverlauf

3-Monats-Trend: +22.29%

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Technische Spezifikationen

Physical

Case/PackageSOT-23-3

Number of Pins3

Number of Terminals3

Technical

Collector Emitter Breakdown Voltage50 V

Collector Emitter Saturation Voltage250 mV

Collector Emitter Voltage (VCEO)50 V

Continuous Collector Current100 mA

Current Rating100 mA

Element ConfigurationSingle

hFE Min160

Max Breakdown Voltage50 V

Max Collector Current100 mA

Max Operating Temperature150 °C

Max Output Current100 mA

Max Power Dissipation400 mW

Min Operating Temperature-55 °C

Number of Elements1

Operating Supply Voltage50 V

PackagingTape and Reel

PolarityPNP

Power Dissipation246 mW

Schedule B8541210080

Voltage Rating (DC)-50 V

Dimensions

Height1.01 mm

Length3.04 mm

Width1.4 mm