onsemi HUF75639S3S

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
$ 1.294
Obsolete
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DistributorSKUMinPkg
Verical
3
HUF75639S3S17.399235
Rochester ElectronicsHUF75639S3S20.230
4h
AvnetHUF75639S3S0400
6h
Win SourceWS-HUF75639S3S2030
5h
Worldway ElectronicsHUF75639S3S29.5067Tube
1d

Datenblätter und Dokumente

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IHS

Datasheet10 SeitenVor 24 Jahren

onsemi

Fairchild Semiconductor

Jameco

iiiC

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

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Beschreibungen

Beschreibungen von onsemi HUF75639S3S, die von den Distributoren bereitgestellt werden.

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
Win Source
Trans MOSFET N-CH 100V 56A 3-Pin (2+Tab) TO-263AB Rail
Verical
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
Newark
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Fairchild Semiconductor

Bilder

element14
iiiC
Rochester Electronics

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