onsemi HUF75332P3

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB

55 V, 60 A, 0.019 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

145W(Tc) 20V 4V@ 250µA 85nC@ 20 V 1individualNChannel 55V 19mΩ@ 60A,10V 60A 1.3nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.