onsemi HUF75332P3

Name: onsemi HUF75332P3
Brand: onsemi
SKU: HUF75332P3

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

$ 1.089

EOL

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	HUF75332P3	9.713					1,050	0,872	0,777	23h
Verical	9	HUF75332P3	787	286					1,089	0,971
DigiKey		HUF75332P3FS-ND	354	1	Tube	2,570	2,570	1,139	1,139	1,139
Newark		HUF75332P3	0	800					1,320	1,100
Avnet		HUF75332P3	0	1600							1d

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IHS

Datasheet10 SeitenVor 21 Jahren

Newark

onsemi

Fairchild Semiconductor

iiiC

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onsemiHUF75332P3

onsemiHUF75332P3_NL

Price @ 1000

$ 1.089

$ 0.68

Stock

236,703

30,002

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

60 A

Threshold Voltage

Rds On Max

19 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

145 W

Input Capacitance

1.3 nF

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-06-01

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2025-10-08

LTD Date2026-04-08

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

Beschreibungen

Beschreibungen von onsemi HUF75332P3, die von den Distributoren bereitgestellt werden.

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

onsemi

52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

55 V, 60 A, 0.019 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

Newark

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.

Fairchild Semiconductor

Bilder

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Technische Spezifikationen

Physical

Case/PackageTO-220AB

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight1.8 g

Technical

Continuous Drain Current (ID)60 A

Current Rating60 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance19 mΩ

Drain to Source Voltage (Vdss)55 V

Element ConfigurationSingle

Fall Time45 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.3 nF

Max Operating Temperature175 °C

Max Power Dissipation145 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation145 W

Rds On Max19 mΩ

Rise Time90 ns

Turn-Off Delay Time50 ns

Turn-On Delay Time9 ns

Voltage Rating (DC)55 V

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