onsemi HGTG30N60B3D..

HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
Obsolete
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onsemi

Datasheet9 SeitenVor 6 Jahren
Datasheet0 SeitenVor 0 Jahren
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IHS

element14 APAC

Future Electronics

TME

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi HGTG30N60B3D.., die von den Distributoren bereitgestellt werden.

HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V IGBT UFS N-Channel
IGBT,N CH,600V,30A,TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.

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