onsemi HGTG30N60B3D..
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Verwandte Teile
STMicroelectronicsSTGW30NC60WD
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
STMicroelectronicsSTGW30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
STMicroelectronicsSTGW35NB60SD
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
InfineonIKW40N65H5FKSA1
650V DuoPack IGBT and Diode High speed switching series fifth generation
Beschreibungen
Beschreibungen von onsemi HGTG30N60B3D.., die von den Distributoren bereitgestellt werden.
HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V IGBT UFS N-Channel
IGBT,N CH,600V,30A,TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.45 V
Collector Emitter Voltage (VCEO)600 V
Current Rating60 A
Element ConfigurationSingle
Fall Time150 ns
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation208 W
Reverse Recovery Time55 ns
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time137 ns
Turn-On Delay Time36 ns
Voltage Rating (DC)600 V
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen