onsemi FQU12N20TU

N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
$ 0.414
Obsolete
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Rochester ElectronicsFQU12N20TU3.914
23h
FarnellFQU12N20TU05040Tube
9h
Microchip USAFQU12N20TU338600Bulk
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Component Stockers USAFQU12N20TU5.907
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Win SourceWS-FQU12N20TU1.71440
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Datasheet9 SeitenVor 12 Jahren
Datasheet0 SeitenVor 0 Jahren

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi FQU12N20TU, die von den Distributoren bereitgestellt werden.

N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
onsemi
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
Newark
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
IHS
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Fairchild Semiconductor

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