onsemi FQU9N25TU

Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
$ 0.54
Obsolete
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Rochester Electronics
2
FQU9N25TU133.479
20h
Flip ElectronicsFQU9N25TU1.039
8h
AvnetFQU9N25TU01725
22h
NewarkFQU9N25TU05040
FarnellFQU9N25TU05040Tube
7h

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Datasheet11 SeitenVor 4 Jahren
Datasheet10 SeitenVor 12 Jahren

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 4 hours ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 hours ago)

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Beschreibungen

Beschreibungen von onsemi FQU9N25TU, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
onsemi
250 V, 7.4 A, 420 MILLI OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
ComSIT Distribution GmbH
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

Rochester Electronics
iiiC

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