onsemi FQPF9N25CT
$ 0.533
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQPF9N25CT | 43 | 21h | |||||||||
| Newark | FQPF9N25CT | 0 | 1K | |||||||||
| Farnell | FQPF9N25CT | 0 | 1K | Tube | 21h | |||||||
| Microchip USA | FQPF9N25CT | 307 | 3K | Tube | 7d | |||||||
| Component Stockers USA | FQPF9N25CT | 46 | >1wk |
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
Laden Sie onsemi FQPF9N25CT Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
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|---|---|---|---|
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Price @ 1000
$ 0.533
$ 0.567
Stock
71,242
58,312
Authorized Distributors
3
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
250 V
250 V
Continuous Drain Current (ID)
8.8 A
6.7 A
Threshold Voltage
-
-
Rds On Max
430 mΩ
420 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
38 W
45 W
Input Capacitance
710 pF
700 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-22
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Beschreibungen
Beschreibungen von onsemi FQPF9N25CT, die von den Distributoren bereitgestellt werden.
Power MOSFET, N-Channel, QFET®, 250 V, 8.8 A, 430 mΩ, TO-220F
Trans MOSFET N-CH 250V 8.8A 3-Pin(3+Tab) TO-220FP Tube
N-Channel 250 V 8.8 A 38 W Through Hole Mosfet TO-220F-3
Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet S - Single; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:38W Rohs Compliant: Yes |Onsemi FQPF9N25CT
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)8.8 A
Current Rating8.8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance430 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance710 pF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rds On Max430 mΩ
Rise Time85 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)250 V
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen