onsemi FQPF9N50C
$ 0.921
EOL
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3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
Laden Sie onsemi FQPF9N50C Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
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|---|---|---|---|
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Price @ 1000
$ 0.921
$ 0.409
Stock
1,705,871
16,181
Authorized Distributors
6
1
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
-
Drain to Source Voltage (Vdss)
500 V
-
Continuous Drain Current (ID)
9 A
8 A
Threshold Voltage
4 V
-
Rds On Max
800 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
44 W
44 W
Input Capacitance
1.03 nF
-
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Verwandte Teile
STMicroelectronicsSTP10NK60ZFP
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
STMicroelectronicsSTP9NK50ZFP
STP9NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN TO-220FP
Beschreibungen
Beschreibungen von onsemi FQPF9N50C, die von den Distributoren bereitgestellt werden.
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 9A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissi
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation44 W
Rds On Max800 mΩ
Rise Time65 ns
Threshold Voltage4 V
Turn-Off Delay Time93 ns
Voltage Rating (DC)500 V