onsemi FQD10N20LTM

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK
EOL
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
Farnell
2
FQD10N20LTM01Cut Tape
1d
element14 APAC
2
FQD10N20LTM01Cut Tape
14h
Weyland Electronics Group Pte. Ltd.FQD10N20LTM4.4301Tape & Reel
4h
Win SourceWS-FQD10N20LTM6.00018
2h
Worldway ElectronicsFQD10N20LTM9.4577Tape & Reel
38m

Datenblätter und Dokumente

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Technical Drawing1 SeiteVor 3 Jahren

IHS

onsemi

Fairchild Semiconductor

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Alternative Teile

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onsemiFQD10N20LTM
onsemiFQD12N20LTM
Price @ 1000
$ 0.432
Stock
186,375
1,037,201
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
7.6 A
9 A
Threshold Voltage
-
2 V
Rds On Max
360 mΩ
280 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
830 pF
1.08 nF

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Verwandte Teile

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N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
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N-Channel Power MOSFET,UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
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Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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STMicroelectronicsSTD8NF25
N-channel 250 V, 318 mOhm typ., 8 A, STripFET(TM) II Power MOSFET in DPAK package
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Beschreibungen

Beschreibungen von onsemi FQD10N20LTM, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK
onsemi
FQD10N20L Series 200 V 7.6 A 360 mO N-Channel QFET MOSFET - TO-252-3
Future Electronics
Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R
Avnet
MOSFET, N-CH, 200V, 7.6A, 150DEG C, 51W; Available until stocks are exhausted Alternative available
Farnell
TAPE REEL/N-CH/LL/200V/7.6A/0.36OHM@VGS=10V/0.38OHM@VGS=5V
Newark
场效应管, MOSFET, N沟道, 200V, 7.6A, 150度 C, 51W;
element14 APAC
MOSFETs 200V N-Ch QFET Logic Level
Mouser
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

element14 APAC
LZChips
Future Electronics
Rochester Electronics

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  • ON Semiconductor / Fairchild
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  • ON Semiconductor Cor
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  • ON SEMICONDUCTOR CORP
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  • ON Semiconductor Corporation
  • ON4
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  • ON-SEMI SCG
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