onsemi FQD12N20TM

N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
$ 0.392
EOL
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Preis und Lagerbestand

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Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Rochester Electronics
FQD12N20TM
2.153
USD
0,415
0,344
0,307
23h
RS (Formerly Allied Electronics)
FQD12N20TM
0
10
Bulk
USD
0,440
0,440
0,440
0,440
13h
Weyland Electronics Group Pte. Ltd.
FQD12N20TM
5.000
1
Tape & Reel
USD
4,560
4,560
4,560
4,560
4,560
1h
Win Source
WS-FQD12N20TM
5.000
70
USD
0,756
0,504
0,504
20m
YIC International
FQD12N20TM
18.437
USD
27,048
27,048
27,048
27,048
27,048
>1wk

Datenblätter und Dokumente

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IHS

Datasheet9 SeitenVor 13 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Fairchild Semiconductor

iiiC

DigiKey

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

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Beschreibungen

Beschreibungen von onsemi FQD12N20TM, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
onsemi
TRANSISTOR, N-CHANNEL, QFET MOSFET, 200V, 9A, 280 MOHM AT VGS 10V, DPAK
RS (Formerly Allied Electronics)
XTR,PWR,MFT,FQD12N20,DPK 200V,9.0A,N-CHNL MOSFET RDS(on)=0.28 OHM,DPAK PKG
Sensible Micro
N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK
Future Electronics
MOSFET, 2.5W(Ta) 55W(Tc) 30V 5V@250µA 23nC@10V N-Ch 200V 280mΩ@4.5A,10V 9A 910pF@25V TO-252AA SMD 6.73mm × 6.22mm × 2.39mm
UnikeyIC
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Fairchild Semiconductor

Bilder

TME
RS
Newark
Conrad
Future Electronics
Rochester Electronics

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  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON Semiconductor / Fairchild
  • ON SEMICOND
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • onsemi / Fairchild
  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • FQD12N20TM.