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onsemiFQB34P10TM

onsemiFQB34P10TM-F085

Price @ 1000

$ 1.56

$ 1.71

Stock

531,458

161,705

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vds)

-100 V

Continuous Drain Current (ID)

33.5 A

Threshold Voltage

4 V

Rds On Max

60 mΩ

Gate to Source Voltage (Vgs)

25 V

Power Dissipation

3.75 W

Input Capacitance

2.91 nF

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-24

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FQB34P10TM, die von den Distributoren bereitgestellt werden.

TRANSISTOR, P-CHANNEL, QFET MOSFET, -100V, -33.5A, 60 MOHM, 175C MAX, D2PAK

RS (Formerly Allied Electronics)

Transistor: P-MOSFET; unipolar; 100V; 23.5A; 155W; D2PAK; QFET®

SHENGYU ELECTRONICS

P-Channel QFET® MOSFET -100V, -33.5A, 60mΩ

onsemi

P-Channel 100 V 0.06 Ohm Surface Mount Mosfet - D2PAK-3

Future Electronics

Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33.5mA; On Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor

Bilder

Farnell

TME

Future Electronics

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

FQB34P10TM.

Bestandsverlauf

3-Monats-Trend: -21.55%

CAD-Modelle

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Alternative Teile

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Technische Spezifikationen

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight1.31247 g

Technical

Continuous Drain Current (ID)33.5 A

Current Rating-34 A

Drain to Source Breakdown Voltage-100 V

Drain to Source Resistance60 mΩ

Drain to Source Voltage (Vds)-100 V

Element ConfigurationSingle

Fall Time210 ns

Gate to Source Voltage (Vgs)25 V

Input Capacitance2.91 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation155 W

Min Breakdown Voltage100 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

Power Dissipation3.75 W

Rds On Max60 mΩ

Resistance60 mΩ

Rise Time250 ns

Schedule B8541290080

Threshold Voltage4 V

Turn-Off Delay Time160 ns

Turn-On Delay Time25 ns

Voltage Rating (DC)-100 V

Dimensions

Height5.08 mm

Length10.67 mm

Width9.65 mm