onsemi FQAF13N80

N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
Obsolete
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Flip ElectronicsFQAF13N80402
6d
AvnetFQAF13N800248
17h
Microchip USAFQAF13N80159600Tray
7h
Win SourceWS-FQAF13N8025.00050
15h
Worldway ElectronicsFQAF13N8011.6697Tube
14h

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Datasheet8 SeitenVor 12 Jahren

Newark

Fairchild Semiconductor

onsemi

iiiC

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-04-24
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FQAF13N80, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
onsemi
N-Channel 800 V 0.75 Ohm Through Hole Mosfet - TO-3PF
Future Electronics
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail
Verical
MOSFET, N-CH, 800V, 8A, 150DEG C, 120W; Available until stocks are exhausted Alternative available
Farnell
Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
120W(Tc) 30V 5V@ 250¦ÌA 88nC@ 10 V 1N 800V 750m¦¸@ 4A,10V 8A 3.5nF@25V TO-3PF 15.7mm*5.7mm*26.7mm
UnikeyIC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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