MOSFET, N-CH, 500V, 4.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.38ohm; Available until stocks are exhausted Alternative available

Farnell

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

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Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Technische Spezifikationen

Physical

Case/PackageTO-220

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight1.8 g

Technical

Continuous Drain Current (ID)4.5 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance1.5 Ω

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time21 ns

Gate to Source Voltage (Vgs)25 V

Input Capacitance440 pF

Max Operating Temperature150 °C

Max Power Dissipation78 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Elements1

PackagingRail/Tube

Power Dissipation18 W

Rds On Max1.5 Ω

Rise Time22 ns

Turn-Off Delay Time28 ns

Turn-On Delay Time12 ns

Dimensions

Height16.3 mm

Length10.67 mm

Width4.7 mm

Datenblätter und Dokumente

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