onsemi FCP4N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
$ 1.05
EOL
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DistributorSKUMinPkg
Rochester Electronics
2
FCP4N606.909
19h
FarnellFCP4N6001
19h
element14 APACFCP4N6001
1d
Microchip USAFCP4N60133150Tube
7d
Win SourceWS-FCP4N605.480175
20h

Datenblätter und Dokumente

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Newark

Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

IHS

onsemi

Fairchild Semiconductor

element14 APAC

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-28
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-01-03
LTD Date2024-07-03
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FCP4N60, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
onsemi
Transistor: N-MOSFET; unipolar; 600V; 3.9A; 1.2ohm; 50W; -55+150 deg.C; THT; TO220
Maritex
N-Channel 600 V 1.2 Ohm Flange Mount SuperFET Mosfet - TO-220
Future Electronics
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail
Avnet
Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Bilder

RS
Newark
iiiC
LZChips
Future Electronics
Conrad
Rochester Electronics

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  • ON Semicondu
  • OSC
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  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd