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Price @ 1000
$ 0.654
$ 0.654
Stock
151,766
487,693
487,693
Authorized Distributors
1
2
2
Mount
Surface Mount
-
-
Case/Package
TO-263-3
-
-
Drain to Source Voltage (Vdss)
30 V
-
-
Continuous Drain Current (ID)
80 A
50 A
50 A
Threshold Voltage
2.5 V
-
-
Rds On Max
5.7 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
12 V
12 V
Power Dissipation
80 W
83 W
83 W
Input Capacitance
2.525 nF
-
-
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-04-15
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Verwandte Teile
InfineonIPB120N03S4L03ATMA1
MOSFET N-CH 30V 120A D2PAK / N-Channel 30 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3
InfineonIPB80N03S4L02ATMA1
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Beschreibungen
Beschreibungen von onsemi FDB8896, die von den Distributoren bereitgestellt werden.
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)80 A
Current Rating93 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max5.7 mΩ
Resistance5.7 MΩ
Rise Time102 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time58 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen