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onsemi FDB6030L

Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
Obsolete
Datenblatt
Herstellerseite

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Microchip USA
FDB6030L
160
600
Tray
USD
4,225
4,225
7d
Component Stockers USA
FDB6030L
22.992
USD
0,520
0,520
0,490
0,440
0,440
3d
Win Source
WS-FDB6030L
5.500
145
USD
0,259
0,232
7h
Worldway Electronics
FDB6030L
23.676
7
Bulk
USD
0,242
0,238
0,229
0,224
5h
RC Electronics
FDB6030L
48.123
1
USD
0,470
0,430
0,390
0,370
0,360
>1wk

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FDB6030L herunter.

IHS

Datasheet5 SeitenVor 23 Jahren
Datasheet0 SeitenVor 0 Jahren

Fairchild Semiconductor

Future Electronics

Jameco (USA)

iiiC

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-11-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)

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Beschreibungen

Beschreibungen von onsemi FDB6030L, die von den Distributoren bereitgestellt werden.

Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 52A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
52W(Tc) 20V 3V@ 250µA 18nC@ 5 V 1individualNChannel 30V 13mΩ@ 26A,10V 48A 1.25nF@15V TO-263AB SMD mount 10.67mm*9.65mm*4.83mm
UnikeyIC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:48A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
Newark
TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220
Farnell
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Fairchild Semiconductor

Bilder

Newark
Rochester Electronics

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  • ON SEMICONDUCT
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