onsemi FCD9N60NTM

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
EOL
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DistributorSKUMinPkg
Farnell
2
FCD9N60NTM01Cut Tape
8h
element14 APAC
2
FCD9N60NTM01Cut Tape
4h
Win SourceWS-FCD9N60NTM2.15915
9h
Worldway ElectronicsFCD9N60NTM8.0447Tape & Reel
8h
Fmall Co., LimitedFCD9N60NTM22.530
2d

Datenblätter und Dokumente

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IHS

Datasheet8 SeitenVor 12 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Fairchild Semiconductor

element14 APAC

Farnell

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Alternative Teile

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onsemiFCD9N60NTM
onsemiNTD360N65S3H
Price @ 1000
$ 1.221
Stock
154,110
253,134
Authorized Distributors
2
6
Mount
Surface Mount
-
Case/Package
DPAK
-
Drain to Source Voltage (Vdss)
600 V
-
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
3 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
92.6 W
-
Input Capacitance
1 nF
-

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-02
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Verwandte Teile

STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
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onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
Details
STMicroelectronicsSTD13NM60ND
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
Details
STMicroelectronicsSTD13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Details
onsemiFCD7N60TM
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
Details
onsemiFCD7N60TM-WS
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
Details

Beschreibungen

Beschreibungen von onsemi FCD9N60NTM, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
onsemi
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
Win Source
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Semicontronic
MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
Farnell
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Bilder

Augswan
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element14 APAC
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Future Electronics
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