onsemi BSS138L
$ 0.061
EOL
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Bestandsverlauf
3-Monats-Trend: -10.60%
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Price @ 1000
$ 0.061
$ 0.077
$ 0.077
Stock
3,835,167
64,592,835
64,592,835
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
200 mA
220 mA
220 mA
Threshold Voltage
1.25 V
1.3 V
1.3 V
Rds On Max
3.5 Ω
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
225 mW
360 mW
360 mW
Input Capacitance
50 pF
27 pF
27 pF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-10-31
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Verwandte Teile
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BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
Beschreibungen
Beschreibungen von onsemi BSS138L, die von den Distributoren bereitgestellt werden.
N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω
N-Channel 50 V 3.5 O 2.4 nC Logic Level Enhancement Mode Mosfet - SOT-23
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CHANNEL, 50V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2.; Available until stocks are exhausted Alternative available
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 200 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 350
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -10.60%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time5.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation225 mW
Rds On Max3.5 Ω
Rise Time1.8 ns
Schedule B8541210080
Threshold Voltage1.25 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Dimensions
Height1.11 mm