Beschreibungen von onsemi BSS138, die von den Distributoren bereitgestellt werden.
Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
onsemi NChannel EnhancedMOSTube, Vds=50 V, 220 mA, SOT-23encapsulation, surface mount, 3Pin
Power MOSFET, N Channel, 50 V, 300 mA, 2.5 ohm, SOT-23, Surface Mount
N-Channel Logic Level Enhancement Mode Field Effect Transistor Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360