onsemi BSS123
$ 0.089
Production
Preis und Lagerbestand
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Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +0.95%
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Price @ 1000
$ 0.089
$ 0.075
$ 0.075
Stock
39,721,491
78,516,829
78,516,829
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
170 mA
170 mA
170 mA
Threshold Voltage
1.7 V
800 mV
800 mV
Rds On Max
6 Ω
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
360 mW
225 mW
225 mW
Input Capacitance
73 pF
20 pF
20 pF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
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InfineonBSS123NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
onsemiBSS123LT1G
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
Beschreibungen
Beschreibungen von onsemi BSS123, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23
N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 170 mA, 6Ω
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
N-CHANNEL TRENCHMOS TRANSISTOR LOGIC LEVEL FET Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Current Temperature:25°C; Device Marking:BSS123; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Pulse Current Idm:680mA; SMD Marking:SA; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: +0.95%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)170 mA
Current15 A
Current Rating170 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max6 Ω
Resistance6 Ω
Rise Time9 ns
Schedule B8541210080
Threshold Voltage1.7 V
Turn-Off Delay Time17 ns
Turn-On Delay Time1.7 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height1.11 mm
Length2.92 mm
Width1.3 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen