Nexperia BST62,115

Trans Darlington PNP 80V 1A Automotive 4-Pin(3+Tab) SOT-89 T/R
$ 0.354
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Newark
2
BST62,1151691Cut Tape
TME
2
BST62.11501
20h
AvnetBST62,11506K
9h
element14 APAC
3
BST62,11501Cut Tape
20h
Farnell
3
BST62,11501Cut Tape
1d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BST62,115 herunter.

IHS

Datasheet8 SeitenVor 2 Jahren
Datasheet0 SeitenVor 0 Jahren

Farnell

element14 APAC

Bestandsverlauf

3-Monats-Trend:
-100%
Powered bySpectra logo

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Verwandte Teile

Diodes Inc.BCX5316TA
Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 1 W, SOT-89, Surface Mount
Details
Diodes Inc.BCX53TA
Bipolar (BJT) Single Transistor, PNP, 80 V, 1 A, 2 W, SOT-89, Surface Mount
Details
Diodes Inc.BCX5310TA
Bipolar (BJT) Transistor PNP 80 V 1 A 150MHz 1 W Surface Mount SOT-89-3
Details
ROHM2SB1260T100Q
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Details
ROHM2SB1260T100R
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Details

Beschreibungen

Beschreibungen von Nexperia BST62,115, die von den Distributoren bereitgestellt werden.

Trans Darlington PNP 80V 1A Automotive 4-Pin(3+Tab) SOT-89 T/R
Verical
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, Plastic/Epoxy, 3 Pin
IHS
BST62 Series -80 V -1 A Surface Mount PNP Darlington Transistor - SOT-89
Future Electronics
NEXPERIA - BST62,115 - DARLINGTON-TRANSISTOR, PNP, SOT89
Utmel Electronic
TRANSISTOR DARL PNP SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:2000; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-1.3V; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:2000; Package / Case:SOT-89; Power Dissipation Pd:1.3W; Termination Type:SMD; Transistor Type:Darlington
element14 APAC

Bilder

Nexperia
element14
element14 APAC
TME
Farnell
Future Electronics

Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)