Infineon SPB12N50C3ATMA1
$ 1.1
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | SPB12N50C3ATMA1 | 89 | 2d | |||||||||
| Farnell | SPB12N50C3ATMA1 | 0 | 1 | Cut Tape | 22h | |||||||
| Component Stockers USA | SPB12N50C3 | 602 | >1wk | |||||||||
| Win Source | WS-SPB12N50C3 | 17.000 | 40 | 23h | ||||||||
| Worldway Electronics | SPB12N50C3ATMA1 | 13.033 | 7 | Tape & Reel | 22h |
Bestandsverlauf
3-Monats-Trend: Restocked
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
Verwandte Teile
InfineonSPB11N60C3ATMA1
Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
Beschreibungen
Beschreibungen von Infineon SPB12N50C3ATMA1, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-Ch 500V 11.6A D2PAK-2 CoolMOS C3
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:11.6A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: Restocked
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-263-3
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11.6 A
Current Rating11.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance380 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time8 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)560 V
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon SPB12N50C3ATMA1 herunter.
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen