Infineon SI4410DYPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon SI4410DYPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-22
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
Diodes Inc.DMG4406LSS-13
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
InfineonIRF7807ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-20V
Diodes Inc.DMS3015SSS-13
N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
VishaySI4890BDY-T1-GE3
Si4890BDY Series N-Channel 30 V 12 mOhms Surface Mount Power Mosfet - SOIC-8
Beschreibungen
Beschreibungen von Infineon SI4410DYPBF, die von den Distributoren bereitgestellt werden.
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 10A 8-Pin SOIC
MOSFET, 30V, 10A, 13.5 MOHM, 30 NC QG, SO-8
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Planar_Mosfets Rohs Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:SI4410DY; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.585 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Rise Time7.7 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon SI4410DYPBF herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen