Infineon IRLR9343PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.503
Stock
133,152
500,542
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-1 V
-
Rds On Max
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
79 W
79 W
Input Capacitance
660 pF
660 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonIRFR5505TRPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonIRFR5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonIRFR5505GTRPBF
MOSFET, P-CHANNEL, -55V, -18A, 110 MOHM, 21.3 NC QG, D-PAK, HALOGEN-FREE
Beschreibungen
Beschreibungen von Infineon IRLR9343PBF, die von den Distributoren bereitgestellt werden.
MOSFET, P-CHANNEL, -55V, -20A, 105 MOHM, 31 NC QG, LOGIC LEVEL, D-PAK
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, P CH, -55V, -20A, TO-252AA-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -20A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.093ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating-20 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time9.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage55 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance105 mΩ
Package Quantity3000
Power Dissipation79 W
Rds On Max105 mΩ
Resistance105 MΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time21 ns
Turn-On Delay Time9.5 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen