Infineon IRLR8259PBF
$ 0.337
Obsolete
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Price @ 1000
$ 0.337
$ 1.88
Stock
370,014
453,831
Authorized Distributors
3
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
1.9 V
-
Rds On Max
8.7 mΩ
8.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
48 W
48 W
Input Capacitance
900 pF
900 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
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onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
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Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
Beschreibungen
Beschreibungen von Infineon IRLR8259PBF, die von den Distributoren bereitgestellt werden.
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH 25V 57A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:25V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.7 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time8.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
On-State Resistance8.7 mΩ
Package Quantity3000
Power Dissipation48 W
Rds On Max8.7 mΩ
Recovery Time26 ns
Resistance8.7 MΩ
Rise Time38 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time9.1 ns
Turn-On Delay Time8.4 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen