Infineon IRLR3410TRPBF
$ 0.443
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR3410TRPBF | 8.000 | 2K | 1d | ||||||||
| Newark | IRLR3410TRPBF | 12.006 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLR3410TRPBF | 120.000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRLR3410TRPBF | 11.283 | 1 | |||||||||
| Rutronik | TMOSP12639 | 2.000 | 2K | 5h |
Bestandsverlauf
3-Monats-Trend: -26.48%
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Price @ 1000
$ 0.443
$ 1.17
$ 1.17
Stock
2,192,342
632,354
632,354
Authorized Distributors
6
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
2 V
-
-
Rds On Max
105 mΩ
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
52 W
79 W
79 W
Input Capacitance
800 pF
800 pF
800 pF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-30
Lifecycle StatusProduction (Last Updated: 1 month ago)
Verwandte Teile
InfineonIRLR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
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Single N-Channel 100 V 105 mOhm 34 nC Automotive HEXFET® Power Mosfet - DPAK
InfineonAUIRLR3410
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
onsemiHUF76619D3S
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
Beschreibungen
Beschreibungen von Infineon IRLR3410TRPBF, die von den Distributoren bereitgestellt werden.
Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
Single N-Channel 100V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -26.48%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance800 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance105 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation52 W
Rds On Max105 mΩ
Resistance105 mΩ
Rise Time53 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen