Infineon IRL8113STRLPBF
$ 3.29
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRL8113STRLPBF | 0 | 800 | Bulk | 6h | |||||||
| Win Source | WS-IRL8113STRLPBF | 20 | 75 | 14h | ||||||||
| Worldway Electronics | IRL8113STRLPBF | 6.923 | 7 | Tape & Reel | 13h | |||||||
| SHENGYU ELECTRONICS | IRL8113STRLPBF | 12.520 | 1 | 3d | ||||||||
| Klychip | IRL8113STRLPBF | Kontakt | 1 | >1wk |
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Dieser Teil
Alternative Teile
Price @ 1000
$ 3.29
$ 3.39
Stock
19,463
100,642
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
-
Rds On Max
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
2.84 nF
2.84 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
STMicroelectronicsSTB95N3LLH6
N-channel 30 V, 3.7 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
onsemiNTB125N02RT4
Cut Tape (CT) Surface Mount N-CHANNEL Single Mosfet Transistor 120.5A 1.98W 21ns 24V
Beschreibungen
Beschreibungen von Infineon IRL8113STRLPBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 30 V 7.1 mOhm 35 nC HEXFET® Power Mosfet - TO-263-3
Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6 mΩ
Package Quantity800
Power Dissipation110 W
Rds On Max6 mΩ
Rise Time38 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time14 ns
Dimensions
Height4.699 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen