Infineon IRL2505SPBF
$ 2.41
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
VishaySQM110N05-06L_GE3
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
InfineonAUIRF3205ZS
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIRL1004SPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;D2Pak;PD 200W;VGS +/-16V
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
Beschreibungen
Beschreibungen von Infineon IRL2505SPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;D2Pak;PD 200W;VGS +/-16V
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 104A 3-Pin(2+Tab) D2PAK
N CHANNEL MOSFET, 55V, 104A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:360A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)104 A
Current Rating104 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time84 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max8 mΩ
Recovery Time210 ns
Rise Time160 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.652 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen