Infineon IRL1404ZPBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 40 V 5.9 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

Trans MOSFET N-CH 40V 200A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 120A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 40V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.1mohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:790A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:2.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.7V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.