Infineon IRF2804PBF
$ 1.053
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-10-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
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NXP SemiconductorsPSMN8R0-40PS
Mosfet Transistor, N Channel, 77 A, 40 V, 6.2 Mohm, 10 V, 3 V Rohs Compliant: Yes
Beschreibungen
Beschreibungen von Infineon IRF2804PBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de
Infineon Technologies N channel HEXFET power MOSFET, 40 V, 75 A, TO-220, IRF2804PBF
Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 300 W
40V 75A 300W 2.3m´Î@10V75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Trans MOSFET N-CH 40V 280A 3-Pin(3+Tab) TO-220
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 40V, 270A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF2804PBF.
MOSFET, N, 40V, 280A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Device Marking:IRF2804PBF; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:2.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance2.3 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation300 W
Rds On Max2.3 mΩ
Recovery Time84 ns
Resistance2.3 Ω
Rise Time120 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)40 V
Dimensions
Height19.1 mm
Length10.6426 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen