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Nicht autorisierte Händler
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRL1104SPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-08
LTD Date2012-07-08
Verwandte Teile
InfineonIRL1004SPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;D2Pak;PD 200W;VGS +/-16V
InfineonAUIRFS8403
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonAUIRFS8403TRL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Beschreibungen
Beschreibungen von Infineon IRL1104SPBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 40V 104A 3-Pin (2+Tab) D2PAK
MOSFET, 40V, 104A, 8 MOHM, 45.3 NC QG, LOGIC LEVEL, D2-PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 40V, 104A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.4W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Power Dissipation on 1 Sq. PCB:167W; Pulse Current Idm:416A; SMD Marking:L1104S; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)104 A
Current Rating104 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.445 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2.4 W
Rds On Max8 mΩ
Recovery Time126 ns
Rise Time257 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time32 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)40 V
Dimensions
Height4.957 mm
Length10.67 mm
Width9.65 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRL1104SPBF herunter.
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen