Infineon IRFZ48NSPBF
$ 1.81
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFZ48NSPBF | 0 | 600 | Bulk | 22h | |||||||
| Farnell | IRFZ48NSPBF | 0 | 5 | 5h | ||||||||
| Sensible Micro | IRFZ48NSPBF | 941 | 7d | |||||||||
| Win Source | WS-IRFZ48NSPBF | 16.000 | 145 | 7h | ||||||||
| Worldway Electronics | IRFZ48NSPBF | 8.443 | 7 | Tube | 6h |
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
STMicroelectronicsSTB55NF06T4
N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET
Beschreibungen
Beschreibungen von Infineon IRFZ48NSPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V
Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W
Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)64 A
Current Rating64 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance14 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max14 mΩ
Recovery Time100 ns
Reverse Recovery Time100 ns
Rise Time78 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm