QUELLE	eCAD	mCAD	DATEIEN
Component Search Engine	SymbolFußabdruck	3D	Herunterladen
EE Concierge	SymbolFußabdruck
SnapEDA	SymbolFußabdruck	3D	Herunterladen
Ultra Librarian	SymbolFußabdruck		Herunterladen

Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.

Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 6 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

Beschreibungen

Beschreibungen von Infineon IRLZ24NPBF, die von den Distributoren bereitgestellt werden.

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Transistor MOSFET N-Ch. 18A/55V TO220 IRLZ 24 NPBF

Rapid Electronics

Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.06Ohm,ID 18A,TO-220AB,PD 45W,VGS +/-16V | Infineon IRLZ24N

RS (Formerly Allied Electronics)

55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A HEXDIP PA

Jameco (USA)

HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45

Distrelec

Bilder

RS (Formerly Allied Electronics)

South Microelectronics

SOS electronic

International Rectifier

Jameco (USA)

element14

SOS electronic

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

IRFIRLZ24NPBF
IRLZ 24 NPBF
IRLZ24N
IRLZ24NPBF.
SP001553022

Bestandsverlauf

3-Monats-Trend: -100%

CAD-Modelle

Symbol, Footprint und 3D STEP herunterladen

Alternative Teile

0 Teile verfügbar

Technische Spezifikationen

Physical

Case/PackageTO-220AB

MountPCB, Through Hole

Number of Pins3

Number of Terminals3

Technical

Continuous Drain Current (ID)18 A

Current Rating17 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance75 mΩ

Drain to Source Voltage (Vdss)55 V

Dual Supply Voltage55 V

Element ConfigurationSingle

Fall Time29 ns

Gate to Source Voltage (Vgs)16 V

Input Capacitance480 pF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation45 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs2 V

Number of Channels1

Number of Elements1

On-State Resistance60 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation45 W

Rds On Max60 mΩ

Recovery Time90 ns

Resistance60 mΩ

Rise Time74 ns

Schedule B8541290080

Threshold Voltage2 V

Turn-Off Delay Time20 ns

Turn-On Delay Time7.1 ns

Voltage Rating (DC)55 V

Dimensions

Height19.15 mm

Lead Pitch2.54 mm

Length10.5156 mm

Width4.69 mm

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRLZ24NPBF herunter.