Infineon IRFU2405PBF

Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
$ 1.105
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Rochester Electronics
2
IRFU2405PBF4.421
5h
RS (Formerly Allied Electronics)IRFU2405PBF010Bulk
6h
FarnellIRFU2405PBF01
5h
Win Source
2
WS-IRFU24051.350345
6h
Worldway ElectronicsIRFU2405PBF9.4767Tube
5h

Datenblätter und Dokumente

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Farnell

Datasheet11 SeitenVor 21 Jahren

IHS

Newark

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InfineonIRFU2405PBF
InfineonIRFU2405PBF
Price @ 1000
$ 1.105
$ 1.105
Stock
224,411
224,411
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
-
-
Rds On Max
16 mΩ
16 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
2.43 nF
2.43 nF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-06-01
LTD Date2012-09-01

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Beschreibungen

Beschreibungen von Infineon IRFU2405PBF, die von den Distributoren bereitgestellt werden.

Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IHS
Single N-Channel 55 V 16 mOhm 110 nC HEXFET® Power Mosfet - IPAK
Future Electronics
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 56 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 16 / Gate-Source Voltage V = 20 / Fall Time ns = 78 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Distrelec

Bilder

Infineon
TME
Future Electronics
Newark

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Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFU2405
  • SP001571782