Infineon IRFU120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.21 Ohm; Id 9.4A; I-pak (TO-251AA); Pd 48W
$ 0.368
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
NewarkIRFU120NPBF5.0141
Arrow ElectronicsIRFU120NPBF35.2121
Rochester Electronics
2
IRFU120NPBF54.635
16h
DigiKeyIRFU120NPBF-ND2221Tube
RS (Formerly Allied Electronics)IRFU120NPBF01Bulk
8h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFU120NPBF herunter.

Newark

Datasheet11 SeitenVor 21 Jahren
Datasheet12 SeitenVor 21 Jahren

IHS

DigiKey

RS (Formerly Allied Electronics)

iiiC

Bestandsverlauf

3-Monats-Trend:
+8.62%
Powered bySpectra logo

CAD-Modelle

Laden Sie Infineon IRFU120NPBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.

QUELLEeCADmCADDATEIEN
Component Search Engine
SymbolFußabdruck
3DHerunterladen
EE Concierge
SymbolFußabdruck
Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.
Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2012-08-25
LTD Date2013-02-25

Verwandte Teile

InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
Details
VishayIRFU120PBF
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
Details
onsemiHUF76609D3
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Rail
Details
onsemiFQU13N10LTU
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
Details
InfineonIRFU3910PBF
Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK
Details
InfineonIRFU5410PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
Details

Beschreibungen

Beschreibungen von Infineon IRFU120NPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
RS (Formerly Allied Electronics)
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ComSIT Distribution GmbH
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
Distrelec
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC

Bilder

Infineon
Distrelec
TME
DKO Electronshik
Newark
LZChips
RS
iiiC
Future Electronics
Distrelec
Component Sense
element14
LCSC
iiiC
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFU120N
  • IRFU120NPBF.
  • SP001557678