Infineon IRFS7730PBF
$ 1.24
Obsolete
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Nicht autorisierte Händler
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Price @ 1000
$ 1.24
$ 1.595
Stock
145,599
199,836
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
-
-
Rds On Max
2.6 mΩ
2.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.66 nF
13.66 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-01-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH270N8F7-2
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH240N75F3-2
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
Beschreibungen
Beschreibungen von Infineon IRFS7730PBF, die von den Distributoren bereitgestellt werden.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
TUBE / MOSFET, 75V, 195A, 2.6 Ohm, 271 nC, D2PAK
Brushed motor drive applications | MOSFET N-CH 75V 195A D2PAK
Trans MOSFET N-CH 75V 246A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.6 mΩ
Rise Time120 ns
Schedule B8541290080
Turn-Off Delay Time180 ns
Turn-On Delay Time21 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen