Infineon IRFS7534PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.3
Stock
373,030
617,773
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
-
3.7 V
Rds On Max
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
294 W
294 W
Input Capacitance
10.034 nF
10.034 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonAUIRLS3036TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
InfineonAUIRLS3036
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
Beschreibungen
Beschreibungen von Infineon IRFS7534PBF, die von den Distributoren bereitgestellt werden.
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
Brushed Motor drive applications | MOSFET N CH 60V 195A D2PAK
Trans MOSFET N-CH 60V 232A 3-Pin(2+Tab) D2PAK Tube
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time93 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.034 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation294 W
Rds On Max2.4 mΩ
Rise Time134 ns
Turn-Off Delay Time118 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm