Infineon AUIRLS3036TRL
$ 6.18
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRLS3036TRL | 0 | 100 | Bulk | 18h | |||||||
| Worldway Electronics | AUIRLS3036TRL | 16.079 | 7 | Tape & Reel | 2h | |||||||
| SHENGYU ELECTRONICS | AUIRLS3036TRL | 14.922 | 1 | 3d | ||||||||
| Fly-Wing Technology | AUIRLS3036TRL | 2.194 | 2d | |||||||||
| Vigor Components | AUIRLS3036TRL | 1.228 | 2d |
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 6.18
$ 1.639
$ 1.639
Stock
49,488
258,354
258,354
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
-
2.5 V
2.5 V
Rds On Max
2.4 mΩ
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
11.21 nF
11.21 nF
11.21 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
Verwandte Teile
STMicroelectronicsSTH260N6F6-2
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
InfineonIRFS7534PBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
STMicroelectronicsSTH240N75F3-2
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
Beschreibungen
Beschreibungen von Infineon AUIRLS3036TRL, die von den Distributoren bereitgestellt werden.
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation380 W
Rds On Max2.4 mΩ
Rise Time220 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time66 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen