Infineon IRFS52N15DPBF
$ 3.56
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFS52N15DPBF herunter.
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 3.56
$ 1.098
$ 1.098
Stock
40,524
332,050
332,050
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
51 A
51 A
51 A
Threshold Voltage
5 V
-
-
Rds On Max
32 mΩ
32 mΩ
32 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
2.77 nF
2.77 nF
2.77 nF
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V
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Single N-Channel 150 V 360 W 71 nC Hexfet Power Mosfet Surface Mount - D2PAK
Beschreibungen
Beschreibungen von Infineon IRFS52N15DPBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(2+Tab) D2PAK
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS +/-30
Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2+Tab) D2PAK
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:43A; Cont Current Id @ 25°C:60A; Current Id Max:60A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Rth:0.47; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Current Rating60 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance32 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max32 mΩ
Resistance32 MΩ
Rise Time47 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time28 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)150 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFS52N15DPBF herunter.
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen